AVALANCHE ENERGY RATING (EAS):  29 MJ

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  25 V

DRAIN CURRENT-MAX (ID):  75 A

DRAIN-SOURCE ON RESISTANCE-MAX:  6 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-251

JESD-30 CODE:  R-PSIP-T3

MANUFACTURER:  ADVANCED POWER ELECTRONICS CORP

MANUFACTURER PART NUMBER:  AP86T02GJ

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  175 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  IN-LINE, R-PSIP-T3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  IN-LINE

PART PACKAGE CODE:  TO-251

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  N-CHANNEL

PULSED DRAIN CURRENT-MAX (IDM):  300 A

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  NO

TERMINAL FORM:  THROUGH-HOLE

TERMINAL POSITION:  SINGLE

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON