CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  36A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  1200V (1.2KV)

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  20V

EXPANDED DESCRIPTION:  N-CHANNEL 1200V (1.2KV) 36A (TC) 192W (TC) THROUGH HOLE TO-247-3

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  62NC @ 5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  950PF @ 1000V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  CREE/WOLFSPEED

MANUFACTURER PART NUMBER:  C2M0080120D

MANUFACTURER STANDARD LEAD TIME:  8 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-247-3

PACKAGING:  BULK PACK

POWER DISSIPATION (MAX):  192W (TC)

RDS ON (MAX) @ ID, VGS:  98 MOHM @ 20A, 20V

SERIES:  C2M?

STANDARD PACKAGE:  30

SUPPLIER DEVICE PACKAGE:  TO-247-3

TECHNOLOGY:  SICFET (SILICON CARBIDE)

VGS (MAX):  +25V, -10V

VGS(TH) (MAX) @ ID:  4V @ 5MA