CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  19A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 1200V 19A (TC) 125W (TC) THROUGH HOLE TO-247-3

DRAIN TO SOURCE VOLTAGE (VDSS):  1200V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  20V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  32.6NC @ 20V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  527PF @ 800V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  CREE/WOLFSPEED

MANUFACTURER PART NUMBER:  C2M0160120D

MANUFACTURER STANDARD LEAD TIME:  26 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-247-3

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  125W (TC)

RDS ON (MAX) @ ID, VGS:  196 MOHM @ 10A, 20V

SERIES:  Z-FET?

STANDARD PACKAGE:  30

SUPPLIER DEVICE PACKAGE:  TO-247-3

TECHNOLOGY:  SICFET (SILICON CARBIDE)

VGS (MAX):  +25V, -10V

VGS(TH) (MAX) @ ID:  2.5V @ 500ΜA