CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  444A (TC)

DETAILED DESCRIPTION:  MOSFET ARRAY 2 N-CHANNEL (HALF BRIDGE) 1200V (1.2KV) 444A (TC) 3000W MODULE

DRAIN TO SOURCE VOLTAGE (VDSS):  1200V (1.2KV)

FET FEATURE:  SILICON CARBIDE (SIC)

FET TYPE:  2 N-CHANNEL (HALF BRIDGE)

GATE CHARGE (QG) (MAX) @ VGS:  1127NC @ 20V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  CREE/WOLFSPEED

MANUFACTURER PART NUMBER:  CAS325M12HM2

MANUFACTURER STANDARD LEAD TIME:  52 WEEKS

OPERATING TEMPERATURE:  175°C (TJ)

PACKAGE / CASE:  MODULE

PACKAGING:  BULK PACK

POWER - MAX:  3000W

RDS ON (MAX) @ ID, VGS:  4.3 MOHM @ 400A, 20V

SERIES:  Z-REC?

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  MODULE

VGS(TH) (MAX) @ ID:  4V @ 105MA