2DB1182Q-13

Factory Authorized Line

DIODES INCORPORATED

Electronic Component

2DB1182Q-13

BIPOLAR (BJT) TRANSISTOR PNP 32V 2A 110MHZ 10W SURFACE MOUNT TO-252
Call for availability DIODES INCORPORATED
Mfr Part # 2DB1182Q-13
Qty in Stock Call for availability
Factory Stock N/A
Minimum Order 1
Packaging PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63PACKAGING:  REELSTANDARD PACKAGE:  2,500SUPPLIER DEVICE PACKAGE:  TO-252
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Availability

  • Qty in StockCall for availability
  • Min. Order Qty1
Specification

BASE PART NUMBER:  2DB1182

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  2A

CURRENT - COLLECTOR CUTOFF (MAX):  1ΜA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  120 @ 500MA, 3V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR PNP 32V 2A 110MHZ 10W SURFACE MOUNT TO-252

ENVIRONMENTAL INFORMATION:  ROHS, REACH CERT OF COMPLIANCE

FREQUENCY - TRANSITION:  110MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  2DB1182Q-13

MANUFACTURER STANDARD LEAD TIME:  8 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER - MAX:  10W

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  TO-252

TRANSISTOR TYPE:  PNP

VCE SATURATION (MAX) @ IB, IC:  800MV @ 200MA, 2A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  32V