APT13003LZTR-G1

Factory Authorized Line

DIODES INCORPORATED

Electronic Component

APT13003LZTR-G1

BIPOLAR (BJT) TRANSISTOR NPN 450V 800MA 800MW THROUGH HOLE TO-92
Call for availability DIODES INCORPORATED
Mfr Part # APT13003LZTR-G1
Qty in Stock Call for availability
Factory Stock N/A
Minimum Order 1
Packaging PACKAGE / CASE:  TO-226-3, TO-92-3 (TO-226AA) (FORMED LEADS)PACKAGING:  TAPE BOXSTANDARD PACKAGE:  2,000SUPPLIER DEVICE PACKAGE:  TO-92
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Availability

  • Qty in StockCall for availability
  • Min. Order Qty1
Specification

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  800MA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  6 @ 300MA, 10V

EXPANDED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN 450V 800MA 800MW THROUGH HOLE TO-92

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  APT13003LZTR-G1

MANUFACTURER STANDARD LEAD TIME:  5 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-226-3, TO-92-3 (TO-226AA) (FORMED LEADS)

PACKAGING:  TAPE BOX

POWER - MAX:  800MW

ROHS INFORMATION:  ROHS CERT OF COMPLIANCE

STANDARD PACKAGE:  2,000

SUPPLIER DEVICE PACKAGE:  TO-92

TRANSISTOR TYPE:  NPN

VCE SATURATION (MAX) @ IB, IC:  500MV @ 40MA, 200MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  450V

ALTERNATE PARTS:  APT27ZTR-G1 APT27HZTR-G1