DDA114TH-7

Factory Authorized Line

DIODES INCORPORATED

Electronic Component

DDA114TH-7

PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 PNP - PRE-BIASED (DUAL) 50V 100MA 250MHZ 150MW SURFACE MOUNT SOT-563
Call for availability DIODES INCORPORATED
Mfr Part # DDA114TH-7
Qty in Stock Call for availability
Factory Stock N/A
Minimum Order 1
Packaging PACKAGE / CASE:  SOT-563, SOT-666PACKAGING:  REELSTANDARD PACKAGE:  3,000SUPPLIER DEVICE PACKAGE:  SOT-563
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Availability

  • Qty in StockCall for availability
  • Min. Order Qty1
Specification

BASE PART NUMBER:  DDA114

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  100 @ 1MA, 5V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 PNP - PRE-BIASED (DUAL) 50V 100MA 250MHZ 150MW SURFACE MOUNT SOT-563

ENVIRONMENTAL INFORMATION:  ROHS, REACH CERT OF COMPLIANCE

FREQUENCY - TRANSITION:  250MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  DDA114TH-7

MANUFACTURER STANDARD LEAD TIME:  26 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  SOT-563, SOT-666

PACKAGING:  REEL

POWER - MAX:  150MW

RESISTOR - BASE (R1):  10 KOHMS

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOT-563

TRANSISTOR TYPE:  2 PNP - PRE-BIASED (DUAL)

VCE SATURATION (MAX) @ IB, IC:  300MV @ 100ΜA, 1MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V