CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3.4A, 2.8A

DETAILED DESCRIPTION:  MOSFET ARRAY N AND P-CHANNEL 30V 3.4A, 2.8A 840MW SURFACE MOUNT TSOT-26

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  N AND P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  13NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  400PF @ 15V

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  DMG6602SVTQ-7

MANUFACTURER STANDARD LEAD TIME:  20 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER - MAX:  840MW

RDS ON (MAX) @ ID, VGS:  60 MOHM @ 3.1A, 10V

SUPPLIER DEVICE PACKAGE:  TSOT-26

VGS(TH) (MAX) @ ID:  2.3V @ 250ΜA