CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3.6A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 100V 3.6A (TA) 1.3W (TA) SURFACE MOUNT SOT-223

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  6V, 10V

ENVIRONMENTAL INFORMATION:  ROHS, REACH CERT OF COMPLIANCE

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  10NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  549PF @ 50V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  DMN10H120SE-13

MANUFACTURER STANDARD LEAD TIME:  20 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.3W (TA)

RDS ON (MAX) @ ID, VGS:  110 MOHM @ 3.3A, 10V

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  SOT-223

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3V @ 250ΜA