CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  12A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 20V 12A (TA) 2W (TA) SURFACE MOUNT 8-SOP

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  2.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  58.3NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  2555PF @ 10V

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  DMN2009LSS-13

MANUFACTURER STANDARD LEAD TIME:  32 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2W (TA)

RDS ON (MAX) @ ID, VGS:  8 MOHM @ 12A, 10V

SUPPLIER DEVICE PACKAGE:  8-SOP

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±12V

VGS(TH) (MAX) @ ID:  1.2V @ 250ΜA