CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  10.5A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.5V, 4.5V

EXPANDED DESCRIPTION:  N-CHANNEL 20V 10.5A (TA) 660MW (TA) SURFACE MOUNT U-DFN2020-6 (TYPE E)

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  45.6NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1779PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  DMN2015UFDE-7

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  6-UDFN EXPOSED PAD

PACKAGING:  REEL

POWER DISSIPATION (MAX):  660MW (TA)

RDS ON (MAX) @ ID, VGS:  11.6 MOHM @ 8.5A, 4.5V

ROHS INFORMATION:  ROHS CERT OF COMPLIANCE

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  U-DFN2020-6 (TYPE E)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±12V

VGS(TH) (MAX) @ ID:  1.1V @ 250ΜA