CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  760MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 20V 760MA (TA) 380MW (TA) SURFACE MOUNT 3-DFN1006 (1.0X0.6)

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.5V, 4.5V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  0.93NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  27.6PF @ 16V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  DMN21D2UFB-7B

MANUFACTURER STANDARD LEAD TIME:  16 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  3-UFDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  380MW (TA)

RDS ON (MAX) @ ID, VGS:  990 MOHM @ 100MA, 4.5V

ROHS INFORMATION:  ROHS, REACH CERT OF COMPLIANCE

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  3-DFN1006 (1.0X0.6)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±12V

VGS(TH) (MAX) @ ID:  1V @ 250ΜA