CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  550MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 30V 550MA (TA) 390MW (TA) SURFACE MOUNT X2-DFN0806-3

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.8V, 4.5V

ENVIRONMENTAL INFORMATION:  ROHS, REACH CERT OF COMPLIANCE

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  0.7NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  42.2PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  DMN3900UFA-7B

MANUFACTURER STANDARD LEAD TIME:  20 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  3-XFDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  390MW (TA)

RDS ON (MAX) @ ID, VGS:  760 MOHM @ 200MA, 4.5V

STANDARD PACKAGE:  10,000

SUPPLIER DEVICE PACKAGE:  X2-DFN0806-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  950MV @ 250ΜA