CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  5.3A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

EXPANDED DESCRIPTION:  N-CHANNEL 60V 5.3A (TA) 660MW (TA) SURFACE MOUNT U-DFN2020-6 (TYPE E)

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  22.4NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1287PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  DMN6040SFDE-7

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  6-UDFN EXPOSED PAD

PACKAGING:  REEL

POWER DISSIPATION (MAX):  660MW (TA)

RDS ON (MAX) @ ID, VGS:  38 MOHM @ 4.3A, 10V

ROHS INFORMATION:  ROHS CERT OF COMPLIANCE

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  U-DFN2020-6 (TYPE E)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3V @ 250ΜA