CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  100MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 60V 100MA (TA) 470MW (TA) SURFACE MOUNT 3-X1DFN1006

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.5V, 4V

ENVIRONMENTAL INFORMATION:  ROHS, REACH CERT OF COMPLIANCE

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  0.45NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  32PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  DMN62D0LFB-7

MANUFACTURER STANDARD LEAD TIME:  16 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  3-UFDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  470MW (TA)

RDS ON (MAX) @ ID, VGS:  2 OHM @ 100MA, 4V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  3-X1DFN1006

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  1V @ 250ΜA