ADDITIONAL FEATURE:  HIGH RELIABILITY

AVALANCHE ENERGY RATING (EAS):  50 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  40 V

DRAIN CURRENT-MAX (ABS) (ID):  10.5 A

DRAIN CURRENT-MAX (ID):  7.2 A

DRAIN-SOURCE ON RESISTANCE-MAX:  51 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-252AA

JESD-30 CODE:  R-PSSO-G2

JESD-609 CODE:  E3

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  DMP4051LK3Q-13

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PSSO-G2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  NO

PEAK REFLOW TEMPERATURE (CEL):  260

POLARITY/CHANNEL TYPE:  P-CHANNEL

POWER DISSIPATION-MAX (ABS):  8.9 W

PULSED DRAIN CURRENT-MAX (IDM):  28.9 A

REFERENCE STANDARD:  AEC-Q101

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FINISH:  MATTE TIN (SN)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  SINGLE

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON