CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  9.5A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 30V 9.5A (TA) 1W (TA) SURFACE MOUNT POWERDI3333-8

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.8V, 4.5V

ENVIRONMENTAL INFORMATION:  ROHS, REACH CERT OF COMPLIANCE

FET FEATURE:  SCHOTTKY DIODE (BODY)

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  45.7NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  4310PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  DMS3014SFG-7

MANUFACTURER STANDARD LEAD TIME:  17 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERWDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1W (TA)

RDS ON (MAX) @ ID, VGS:  13 MOHM @ 10.4A, 10V

STANDARD PACKAGE:  2,000

SUPPLIER DEVICE PACKAGE:  POWERDI3333-8

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±12V

VGS(TH) (MAX) @ ID:  2.2V @ 250ΜA