CONFIGURATION:  SINGLE

DS BREAKDOWN VOLTAGE-MIN:  60 V

DRAIN CURRENT-MAX (ID):  280 MA

DRAIN-SOURCE ON RESISTANCE-MAX:  5 O

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PSIP-W3

JESD-609 CODE:  E3

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  UZVP2106ASTOA

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  IN-LINE, R-PSIP-W3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  IN-LINE

PART PACKAGE CODE:  TO-92

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  P-CHANNEL

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  NO

TERMINAL FINISH:  MATTE TIN

TERMINAL FORM:  WIRE

TERMINAL POSITION:  SINGLE

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON