CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  4.5A

CURRENT - COLLECTOR CUTOFF (MAX):  50NA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  100 @ 2A, 1V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN 60V 4.5A 130MHZ 1W THROUGH HOLE E-LINE (TO-92 COMPATIBLE)

FREQUENCY - TRANSITION:  130MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  ZXTN2010A

MANUFACTURER STANDARD LEAD TIME:  16 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-226-3, TO-92-3 (TO-226AA)

POWER - MAX:  1W

STANDARD PACKAGE:  4,000

SUPPLIER DEVICE PACKAGE:  E-LINE (TO-92 COMPATIBLE)

TRANSISTOR TYPE:  NPN

VCE SATURATION (MAX) @ IB, IC:  210MV @ 200MA, 5A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  60V