CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  100 V

DRAIN CURRENT-MAX (ID):  500 MA

DRAIN-SOURCE ON RESISTANCE-MAX:  2.8 O

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  S-XXUC-X4

MANUFACTURER:  EFFICIENT POWER CONVERSION

MANUFACTURER PART NUMBER:  EPC2038ENGR

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  4

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  UNSPECIFIED

PACKAGE DESCRIPTION:  UNCASED CHIP, S-XXUC-X4

PACKAGE SHAPE:  SQUARE

PACKAGE STYLE:  UNCASED CHIP

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

POLARITY/CHANNEL TYPE:  N-CHANNEL

TERMINAL FORM:  UNSPECIFIED

TERMINAL POSITION:  UNSPECIFIED

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  GALLIUM NITRIDE