CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1.1A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  200V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) @ VGS:  11NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  234PF @ 100V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR/FAIRCHILD

MANUFACTURER PART NUMBER:  FDC2612

MANUFACTURER STANDARD LEAD TIME:  17 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.6W (TA)

RDS ON (MAX) @ ID, VGS:  725 MOHM @ 1.1A, 10V

SERIES:  POWERTRENCH®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SUPERSOT?-6

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  4.5V @ 250ΜA