CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  220MA

DRAIN TO SOURCE VOLTAGE (VDSS):  25V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 N-CHANNEL (DUAL)

GATE CHARGE (QG) @ VGS:  0.7NC @ 4.5V

INPUT CAPACITANCE (CISS) @ VDS:  9.5PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR/FAIRCHILD

MANUFACTURER PART NUMBER:  FDC6301N

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER - MAX:  700MW

RDS ON (MAX) @ ID, VGS:  4 OHM @ 400MA, 4.5V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SUPERSOT?-6

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA