FDC655BN

FDC655BN

N-CHANNEL 30V 6.3A (TA) 1.6W (TA) SURFACE MOUNT SUPERSOT?-6

Call for availability

Manufactured by:

FAIRCHILD SEMICONDUCTOR

Mfr Part#:  FDC655BN

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SUPERSOT?-6

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  6.3A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

EXPANDED DESCRIPTION:  N-CHANNEL 30V 6.3A (TA) 1.6W (TA) SURFACE MOUNT SUPERSOT?-6

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  15NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  570PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  FAIRCHILD/ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FDC655BN

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.6W (TA)

RDS ON (MAX) @ ID, VGS:  25 MOHM @ 6.3A, 10V

SERIES:  POWERTRENCH®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SUPERSOT?-6

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3V @ 250ΜA

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