ADDITIONAL FEATURE:  ESD PROTECTION

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  20 V

DRAIN CURRENT-MAX (ABS) (ID):  4.7 A

DRAIN CURRENT-MAX (ID):  4.7 A

DRAIN-SOURCE ON RESISTANCE-MAX:  60 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

FEEDBACK CAP-MAX (CRSS):  100 PF

JESD-30 CODE:  S-PBGA-B4

JESD-609 CODE:  E1

MANUFACTURER:  FAIRCHILD SEMICONDUCTOR CORPORATION

MANUFACTURER PART NUMBER:  FDZ372NZ

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  4

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  GRID ARRAY, S-PBGA-B4

PACKAGE SHAPE:  SQUARE

PACKAGE STYLE:  GRID ARRAY

PART PACKAGE CODE:  CSP

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  4

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  1.7 W

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN/SILVER/COPPER (SN/AG/CU)

TERMINAL FORM:  BALL

TERMINAL POSITION:  BOTTOM

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON