AVALANCHE ENERGY RATING (EAS):  560 MJ

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  250 V

DRAIN CURRENT-MAX (ABS) (ID):  18.5 A

DRAIN CURRENT-MAX (ID):  18.5 A

DRAIN-SOURCE ON RESISTANCE-MAX:  230 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PSFM-T3

JESD-609 CODE:  E0

MANUFACTURER:  FAIRCHILD SEMICONDUCTOR CORPORATION

MANUFACTURER PART NUMBER:  FQA16N25

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  FLANGE MOUNT, R-PSFM-T3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  FLANGE MOUNT

PART PACKAGE CODE:  TO-3P

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  190 W

PULSED DRAIN CURRENT-MAX (IDM):  74 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  NO

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  THROUGH-HOLE

TERMINAL POSITION:  SINGLE

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON