CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  8A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  1000V (1KV)

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

EXPANDED DESCRIPTION:  N-CHANNEL 1000V (1KV) 8A (TC) 225W (TC) THROUGH HOLE TO-3PN

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  70NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  3220PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  FAIRCHILD/ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FQA8N100C

MANUFACTURER STANDARD LEAD TIME:  8 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-3P-3, SC-65-3

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  225W (TC)

RDS ON (MAX) @ ID, VGS:  1.45 OHM @ 4A, 10V

SERIES:  QFET®

STANDARD PACKAGE:  30

SUPPLIER DEVICE PACKAGE:  TO-3PN

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  5V @ 250ΜA