CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3.9A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  800V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

EXPANDED DESCRIPTION:  N-CHANNEL 800V 3.9A (TC) 3.13W (TA), 130W (TC) SURFACE MOUNT D2PAK

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  25NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  880PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  FAIRCHILD/ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FQB4N80TM

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.13W (TA), 130W (TC)

RDS ON (MAX) @ ID, VGS:  3.6 OHM @ 1.95A, 10V

SERIES:  QFET®

STANDARD PACKAGE:  800

SUPPLIER DEVICE PACKAGE:  D2PAK

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  5V @ 250ΜA