CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1.6A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  1000V (1KV)

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

EXPANDED DESCRIPTION:  N-CHANNEL 1000V (1KV) 1.6A (TC) 2.5W (TA), 50W (TC) SURFACE MOUNT D-PAK

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  15.5NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  520PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  FAIRCHILD/ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FQD2N100TM

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.5W (TA), 50W (TC)

RDS ON (MAX) @ ID, VGS:  9 OHM @ 800MA, 10V

SERIES:  QFET®

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  D-PAK

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  5V @ 250ΜA