CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  9.5A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  600V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) @ VGS:  57NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  2040PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR/FAIRCHILD

MANUFACTURER PART NUMBER:  FQPF10N60C

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-220-3 FULL PACK

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  50W (TC)

RDS ON (MAX) @ ID, VGS:  730 MOHM @ 4.75A, 10V

SERIES:  QFET®

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  TO-220F

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  4V @ 250ΜA