CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  30 V

DRAIN CURRENT-MAX (ABS) (ID):  75 A

DRAIN CURRENT-MAX (ID):  75 A

DRAIN-SOURCE ON RESISTANCE-MAX:  6.5 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-263AB

JESD-30 CODE:  R-PSSO-G2

JESD-609 CODE:  E0

MANUFACTURER:  FAIRCHILD SEMICONDUCTOR CORPORATION

MANUFACTURER PART NUMBER:  HUF76145S3ST

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PSSO-G2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  D2PAK

PIN COUNT:  4

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  270 W

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN/LEAD (SN85PB15)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  SINGLE

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON