BASE PART NUMBER:  GB10SLT12

CAPACITANCE @ VR, F:  520PF @ 1V, 1MHZ

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - AVERAGE RECTIFIED (IO):  10A

CURRENT - REVERSE LEAKAGE @ VR:  40ΜA @ 1200V

DETAILED DESCRIPTION:  DIODE SILICON CARBIDE SCHOTTKY 1200V 10A THROUGH HOLE TO-220AC

DIODE TYPE:  SILICON CARBIDE SCHOTTKY

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  GENESIC SEMICONDUCTOR

MANUFACTURER PART NUMBER:  GB10SLT12-220

MANUFACTURER STANDARD LEAD TIME:  18 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE - JUNCTION:  -55°C ~ 175°C

PACKAGE / CASE:  TO-220-2

PACKAGING:  TUBE

REVERSE RECOVERY TIME (TRR):  0NS

SPEED:  NO RECOVERY TIME > 500MA (IO)

STANDARD PACKAGE:  50

SUPPLIER DEVICE PACKAGE:  TO-220AC

VOLTAGE - DC REVERSE (VR) (MAX):  1200V

VOLTAGE - FORWARD (VF) (MAX) @ IF:  1.8V @ 10A