AVALANCHE ENERGY RATING (EAS):  85 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  200 V

DRAIN CURRENT-MAX (ABS) (ID):  4.8 A

DRAIN CURRENT-MAX (ID):  4.6 A

DRAIN-SOURCE ON RESISTANCE-MAX:  800 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-252AA

JESD-30 CODE:  R-PSSO-G2

JESD-609 CODE:  E0

MANUFACTURER:  HARRIS SEMICONDUCTOR

MANUFACTURER PART NUMBER:  IRFR220

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PSSO-G2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION AMBIENT-MAX:  50 W

POWER DISSIPATION-MAX (ABS):  42 W

PULSED DRAIN CURRENT-MAX (IDM):  18 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  SINGLE

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON

TURN-OFF TIME-MAX (TOFF):  53 NS

TURN-ON TIME-MAX (TON):  54 NS