ADDITIONAL FEATURE:  AVALANCHE RATED

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  60 V

DRAIN CURRENT-MAX (ID):  16 A

DRAIN-SOURCE ON RESISTANCE-MAX:  47 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-252AA

JESD-30 CODE:  R-PSSO-G2

MANUFACTURER:  HARRIS SEMICONDUCTOR

MANUFACTURER PART NUMBER:  RFD16N06SM9A

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  175 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PSSO-G2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION AMBIENT-MAX:  72 W

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  SINGLE

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON

TURN-OFF TIME-MAX (TOFF):  125 NS

TURN-ON TIME-MAX (TON):  65 NS