ADDITIONAL FEATURE:  LOW NOISE

CASE CONNECTION:  SOURCE

CONFIGURATION:  SINGLE

DS BREAKDOWN VOLTAGE-MIN:  10 V

DRAIN CURRENT-MAX (ABS) (ID):  40 MA

DRAIN CURRENT-MAX (ID):  40 MA

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

HIGHEST FREQUENCY BAND:  ULTRA HIGH FREQUENCY BAND

JESD-30 CODE:  R-PDSO-G4

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  BF2030WE6327

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  4

OPERATING MODE:  DUAL GATE, DEPLETION MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G4

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SC-82

PIN COUNT:  4

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  200 MW

POWER GAIN-MIN (GP):  20 DB

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  YES

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TRANSISTOR APPLICATION:  AMPLIFIER

TRANSISTOR ELEMENT MATERIAL:  SILICON