CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  13A (TA), 50A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  80V

FET FEATURE:  STANDARD

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

GATE CHARGE (QG) @ VGS:  31NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  2100PF @ 40V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  BSB104N08NP3GXUSA1

MANUFACTURER STANDARD LEAD TIME:  8 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  3 (168 HOURS)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -40°C ~ 150°C (TJ)

PACKAGE / CASE:  3-WDSON

PACKAGING:  REEL

POWER - MAX:  2.8W

RDS ON (MAX) @ ID, VGS:  10.4 MOHM @ 10A, 10V

SERIES:  OPTIMOS?

STANDARD PACKAGE:  5,000

SUPPLIER DEVICE PACKAGE:  MG-WDSON-2, CANPAK M?

VGS(TH) (MAX) @ ID:  3.5V @ 40ΜA