Electronic Component
BSC016N06NS
FETs - Single PG-TDSON-8 Surface MountAvailability
- Qty in StockCall for availability
- Min. Order Qty1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 30A (TA), 100A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 6V, 10V
EXPANDED DESCRIPTION: N-CHANNEL 60V 30A (TA), 100A (TC) 2.5W (TA), 139W (TC) SURFACE MOUNT PG-TDSON-8
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 71NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 5200PF @ 30V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: BSC016N06NS
MANUFACTURER STANDARD LEAD TIME: 14 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-POWERTDFN
PACKAGING: REEL
POWER DISSIPATION (MAX): 2.5W (TA), 139W (TC)
RDS ON (MAX) @ ID, VGS: 1.6 MOHM @ 50A, 10V
SERIES: OPTIMOS?
STANDARD PACKAGE: 5,000
SUPPLIER DEVICE PACKAGE: PG-TDSON-8
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 2.8V @ 95ΜA
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 30A (TA), 100A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 6V, 10V
EXPANDED DESCRIPTION: N-CHANNEL 60V 30A (TA), 100A (TC) 2.5W (TA), 139W (TC) SURFACE MOUNT PG-TDSON-8
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 71NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 5200PF @ 30V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: BSC016N06NS
MANUFACTURER STANDARD LEAD TIME: 14 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-POWERTDFN
PACKAGING: REEL
POWER DISSIPATION (MAX): 2.5W (TA), 139W (TC)
RDS ON (MAX) @ ID, VGS: 1.6 MOHM @ 50A, 10V
SERIES: OPTIMOS?
STANDARD PACKAGE: 5,000
SUPPLIER DEVICE PACKAGE: PG-TDSON-8
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 2.8V @ 95ΜA





