Electronic Component
BSC084P03NS3 G
P-CHANNEL 30V 14.9A (TA), 78.6A (TC) 2.5W (TA), 69W (TC) SURFACE MOUNT PG-TDSON-8Availability
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CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 14.9A (TA), 78.6A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 6V, 10V
EXPANDED DESCRIPTION: P-CHANNEL 30V 14.9A (TA), 78.6A (TC) 2.5W (TA), 69W (TC) SURFACE MOUNT PG-TDSON-8
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 58NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 4785PF @ 15V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: BSC084P03NS3 G
MANUFACTURER STANDARD LEAD TIME: 16 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-POWERTDFN
PACKAGING: REEL
POWER DISSIPATION (MAX): 2.5W (TA), 69W (TC)
RDS ON (MAX) @ ID, VGS: 8.4 MOHM @ 50A, 10V
SERIES: OPTIMOS?
STANDARD PACKAGE: 5,000
SUPPLIER DEVICE PACKAGE: PG-TDSON-8
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±25V
VGS(TH) (MAX) @ ID: 3.1V @ 105ΜA
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 14.9A (TA), 78.6A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 6V, 10V
EXPANDED DESCRIPTION: P-CHANNEL 30V 14.9A (TA), 78.6A (TC) 2.5W (TA), 69W (TC) SURFACE MOUNT PG-TDSON-8
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 58NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 4785PF @ 15V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: BSC084P03NS3 G
MANUFACTURER STANDARD LEAD TIME: 16 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-POWERTDFN
PACKAGING: REEL
POWER DISSIPATION (MAX): 2.5W (TA), 69W (TC)
RDS ON (MAX) @ ID, VGS: 8.4 MOHM @ 50A, 10V
SERIES: OPTIMOS?
STANDARD PACKAGE: 5,000
SUPPLIER DEVICE PACKAGE: PG-TDSON-8
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±25V
VGS(TH) (MAX) @ ID: 3.1V @ 105ΜA





