CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  11.4A (TA), 90A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

GATE CHARGE (QG) @ VGS:  53NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  3900PF @ 50V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  BSC105N10LSFGATMA1

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERTDFN

PACKAGING:  REEL

POWER - MAX:  156W

RDS ON (MAX) @ ID, VGS:  10.5 MOHM @ 50A, 10V

SERIES:  OPTIMOS?

STANDARD PACKAGE:  5,000

SUPPLIER DEVICE PACKAGE:  PG-TDSON-8

VGS(TH) (MAX) @ ID:  2.4V @ 110ΜA