ADDITIONAL FEATURE:  LOGIC LEVEL COMPATIBLE

AVALANCHE ENERGY RATING (EAS):  60 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  100 V

DRAIN CURRENT-MAX (ID):  7.4 A

DRAIN-SOURCE ON RESISTANCE-MAX:  20.5 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PDSO-F5

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  BSC205N10LSGATMA1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  5

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-F5

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

POLARITY/CHANNEL TYPE:  N-CHANNEL

PULSED DRAIN CURRENT-MAX (IDM):  180 A

SURFACE MOUNT:  YES

TERMINAL FORM:  FLAT

TERMINAL POSITION:  DUAL

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON