ADDITIONAL FEATURE:  AVALANCHE RATED

AVALANCHE ENERGY RATING (EAS):  47 MJ

CONFIGURATION:  SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  60 V

DRAIN CURRENT-MAX (ID):  3 A

DRAIN-SOURCE ON RESISTANCE-MAX:  120 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PDSO-G8

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  BSO612CVG

MOISTURE SENSITIVITY LEVEL:  3

NUMBER OF ELEMENTS:  2

NUMBER OF TERMINALS:  8

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G8

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

POLARITY/CHANNEL TYPE:  N-CHANNEL AND P-CHANNEL

PULSED DRAIN CURRENT-MAX (IDM):  12 A

REFERENCE STANDARD:  AEC-Q101

SURFACE MOUNT:  YES

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TRANSISTOR ELEMENT MATERIAL:  SILICON