CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3A, 2A

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

FET FEATURE:  STANDARD

FET TYPE:  N AND P-CHANNEL

FAMILY:  TRANSISTORS - FETS, MOSFETS - ARRAYS

GATE CHARGE (QG) @ VGS:  15.5NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  340PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  BSO612CVGHUMA1

MANUFACTURER STANDARD LEAD TIME:  8 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  3 (168 HOURS)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER - MAX:  2W

RDS ON (MAX) @ ID, VGS:  120 MOHM @ 3A, 10V

SERIES:  SIPMOS®

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  PG-DSO-8

VGS(TH) (MAX) @ ID:  4V @ 20ΜA