CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  120MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 600V 120MA (TA) 1.8W (TA) SURFACE MOUNT PG-SOT223-4

DRAIN TO SOURCE VOLTAGE (VDSS):  600V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  6.6NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  150PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  BSP125H6327XTSA1

MANUFACTURER STANDARD LEAD TIME:  26 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.8W (TA)

RDS ON (MAX) @ ID, VGS:  45 OHM @ 120MA, 10V

SERIES:  SIPMOS®

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  PG-SOT223-4

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.3V @ 94ΜA