CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  660MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 200V 660MA (TA) 1.8W (TA) SURFACE MOUNT PG-SOT223-4

DRAIN TO SOURCE VOLTAGE (VDSS):  200V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  0V, 10V

FET FEATURE:  DEPLETION MODE

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  14NC @ 5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  430PF @ 25V

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  BSP149H6327XTSA1

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.8W (TA)

RDS ON (MAX) @ ID, VGS:  1.8 OHM @ 660MA, 10V

SERIES:  SIPMOS®

SUPPLIER DEVICE PACKAGE:  PG-SOT223-4

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  1V @ 400ΜA