CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  660MA (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  200V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

GATE CHARGE (QG) @ VGS:  16.1NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  357PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  BSP297H6327XTSA1

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER - MAX:  1.8W

RDS ON (MAX) @ ID, VGS:  1.8 OHM @ 660MA, 10V

SERIES:  SIPMOS®

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  PG-SOT223-4

VGS(TH) (MAX) @ ID:  1.8V @ 400ΜA