ADDITIONAL FEATURE:  AVALANCHE RATED

AVALANCHE ENERGY RATING (EAS):  36 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  800 V

DRAIN CURRENT-MAX (ABS) (ID):  190 MA

DRAIN CURRENT-MAX (ID):  190 MA

DRAIN-SOURCE ON RESISTANCE-MAX:  20 O

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PDSO-G4

JESD-609 CODE:  E3

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  BSP300L6327

MOISTURE SENSITIVITY LEVEL:  3

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  4

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G4

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PIN COUNT:  4

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  1.8 W

PULSED DRAIN CURRENT-MAX (IDM):  760 MA

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  YES

TERMINAL FINISH:  MATTE TIN

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TRANSISTOR ELEMENT MATERIAL:  SILICON