CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1.17A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  7.8NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  160PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  BSP315P-E6327

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.8W (TA)

RDS ON (MAX) @ ID, VGS:  800 MOHM @ 1.17A, 10V

SERIES:  SIPMOS®

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  PG-SOT223-4

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  2V @ 160ΜA