ADDITIONAL FEATURE:  AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  30 V

DRAIN CURRENT-MAX (ID):  2.3 A

DRAIN-SOURCE ON RESISTANCE-MAX:  57 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

FEEDBACK CAP-MAX (CRSS):  17 PF

JESD-30 CODE:  R-PDSO-G3

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  BSS306NH6327XTSA1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  N-CHANNEL

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FINISH:  NOT SPECIFIED

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR ELEMENT MATERIAL:  SILICON