CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  540MA (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  55V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

EXPANDED DESCRIPTION:  N-CHANNEL 55V 540MA (TA) 360MW (TA) SURFACE MOUNT PG-SOT23-3

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  2.26NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  75PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  BSS670S2L H6327

MANUFACTURER STANDARD LEAD TIME:  10 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  360MW (TA)

RDS ON (MAX) @ ID, VGS:  650 MOHM @ 270MA, 10V

SERIES:  OPTIMOS?

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  PG-SOT23-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2V @ 2.7ΜA