CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2.3A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

FET FEATURE:  LOGIC LEVEL GATE, 1.8V DRIVE

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

GATE CHARGE (QG) @ VGS:  1.7NC @ 2.5V

INPUT CAPACITANCE (CISS) @ VDS:  529PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  BSS806N H6327

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  500MW

RDS ON (MAX) @ ID, VGS:  57 MOHM @ 2.3A, 2.5V

SERIES:  OPTIMOS?

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  PG-SOT23-3

VGS(TH) (MAX) @ ID:  750MV @ 11ΜA