AVALANCHE ENERGY RATING (EAS):  105 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  30 V

DRAIN CURRENT-MAX (ID):  13.5 A

DRAIN-SOURCE ON RESISTANCE-MAX:  13.4 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  S-PDSO-N5

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  BSZ086P03NS3GXT

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  5

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, S-PDSO-N5

PACKAGE SHAPE:  SQUARE

PACKAGE STYLE:  SMALL OUTLINE

POLARITY/CHANNEL TYPE:  P-CHANNEL

PULSED DRAIN CURRENT-MAX (IDM):  160 A

SURFACE MOUNT:  YES

TERMINAL FORM:  NO LEAD

TERMINAL POSITION:  DUAL

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON